Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors

H. Hasegawa, H. Ohno, H. Ishii, T. Haga, Y. Abe, H. Takahashi

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Electrical characterization reveals several salient common electronic features of insulator-semiconductor (I-S) and semiconductor-semiconductor (S-S) interfaces. Currently available models on the origin of states (defect model, DIGS model, effective workfunction model) are compared in their capabilities of explaining these features. The DIGS (disorder-induced gap state) model is shown to possess maximum capability and consistency. Study of the microstructure of interface by cross-sectional TEM and RBS techniques revealed a strong correlation between lattice disorder and interface state density, and supports the DIGS model.

本文言語English
ページ(範囲)372-382
ページ数11
ジャーナルApplied Surface Science
41-42
C
DOI
出版ステータスPublished - 1990 1
外部発表はい

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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