Orbital susceptibility of higher-stage graphite intercalation compounds

R. Saito, H. Kamimura

研究成果: Article査読

46 被引用数 (Scopus)

抄録

The calculated results of the orbital susceptibility for first- to fifth-stage graphite intercalation compounds (GICs) are presented. In this calculation a new formalism for calculating the orbital susceptibility is presented. Furthermore, in order to perform calculations in an analytical way, the effective Hamiltonian for reproducing the band structures of higher-stage GICs is introduced. In this Hamiltonian the effects of the inhomogeneous charge distribution along the c axis in higher-stage GICs and the interlayer interactions are taken into account within a thin-film model. It is shown that the interband effects between bands split by the inhomogeneous charge distribution plays an essential role in determining the stage dependence of orbital susceptibility. Calculated results of the stage dependence of orbital susceptibility with charge transfer f=1.0 and f=0.3 are in good agreement with observed ones.

本文言語English
ページ(範囲)7218-7227
ページ数10
ジャーナルPhysical Review B
33
10
DOI
出版ステータスPublished - 1986
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学

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