Optomechanical photoabsorption spectroscopy of exciton states in GaAs

Takayuki Watanabe; Hajime Okamoto; Koji Onomitsu; Hideki Gotoh; Tetsuomi Sogawa; Hiroshi Yamaguchi

doi:10.1063/1.4747328

Optomechanical photoabsorption spectroscopy of exciton states in GaAs

Takayuki Watanabe, Hajime Okamoto, Koji Onomitsu, Hideki Gotoh, Tetsuomi Sogawa, Hiroshi Yamaguchi

電気通信研究所・ブロードバンド工学研究部門

研究成果: Article › 査読

7 被引用数 (Scopus)

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We demonstrate a scheme for the photoabsorption spectroscopy of semiconductors via mechanical vibration characteristics. The thermal vibration of an AlGaAs/GaAs heterostructure-based cantilever sensitively reflects the photoabsorption properties of GaAs because of the optically induced piezoelectric effect. The Q factor and the peak amplitude of mechanical vibration are strongly enhanced near the exciton-related absorption peaks of GaAs at 10 K, showing good agreement with reported photoluminescence spectra.

本文言語	English
論文番号	082107
ジャーナル	Applied Physics Letters
巻	101
号	8
DOI	https://doi.org/10.1063/1.4747328
出版ステータス	Published - 2012 8月 20

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.4747328

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title = "Optomechanical photoabsorption spectroscopy of exciton states in GaAs",

abstract = "We demonstrate a scheme for the photoabsorption spectroscopy of semiconductors via mechanical vibration characteristics. The thermal vibration of an AlGaAs/GaAs heterostructure-based cantilever sensitively reflects the photoabsorption properties of GaAs because of the optically induced piezoelectric effect. The Q factor and the peak amplitude of mechanical vibration are strongly enhanced near the exciton-related absorption peaks of GaAs at 10 K, showing good agreement with reported photoluminescence spectra.",

author = "Takayuki Watanabe and Hajime Okamoto and Koji Onomitsu and Hideki Gotoh and Tetsuomi Sogawa and Hiroshi Yamaguchi",

note = "Funding Information: The authors thank I. Mahboob for significant discussions. This work was partly supported by JSPS KAKENHI (23241046).",

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T1 - Optomechanical photoabsorption spectroscopy of exciton states in GaAs

AU - Watanabe, Takayuki

AU - Okamoto, Hajime

AU - Onomitsu, Koji

AU - Gotoh, Hideki

AU - Sogawa, Tetsuomi

AU - Yamaguchi, Hiroshi

N1 - Funding Information: The authors thank I. Mahboob for significant discussions. This work was partly supported by JSPS KAKENHI (23241046).

PY - 2012/8/20

Y1 - 2012/8/20

N2 - We demonstrate a scheme for the photoabsorption spectroscopy of semiconductors via mechanical vibration characteristics. The thermal vibration of an AlGaAs/GaAs heterostructure-based cantilever sensitively reflects the photoabsorption properties of GaAs because of the optically induced piezoelectric effect. The Q factor and the peak amplitude of mechanical vibration are strongly enhanced near the exciton-related absorption peaks of GaAs at 10 K, showing good agreement with reported photoluminescence spectra.

AB - We demonstrate a scheme for the photoabsorption spectroscopy of semiconductors via mechanical vibration characteristics. The thermal vibration of an AlGaAs/GaAs heterostructure-based cantilever sensitively reflects the photoabsorption properties of GaAs because of the optically induced piezoelectric effect. The Q factor and the peak amplitude of mechanical vibration are strongly enhanced near the exciton-related absorption peaks of GaAs at 10 K, showing good agreement with reported photoluminescence spectra.

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Optomechanical photoabsorption spectroscopy of exciton states in GaAs

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