抄録
We demonstrate a scheme for the photoabsorption spectroscopy of semiconductors via mechanical vibration characteristics. The thermal vibration of an AlGaAs/GaAs heterostructure-based cantilever sensitively reflects the photoabsorption properties of GaAs because of the optically induced piezoelectric effect. The Q factor and the peak amplitude of mechanical vibration are strongly enhanced near the exciton-related absorption peaks of GaAs at 10 K, showing good agreement with reported photoluminescence spectra.
本文言語 | English |
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論文番号 | 082107 |
ジャーナル | Applied Physics Letters |
巻 | 101 |
号 | 8 |
DOI | |
出版ステータス | Published - 2012 8月 20 |
ASJC Scopus subject areas
- 物理学および天文学(その他)