Optimum bandgap profile analysis of Cu(In,Ga)Se2 solar cells with various defect densities by SCAPS

Masashi Murata, Daisuke Hironiwa, Naoki Ashida, Jakapan Chantana, Kenta Aoyagi, Naoya Kataoka, Takashi Minemoto

研究成果: Article査読

31 被引用数 (Scopus)

抄録

The bandgap of a Cu(In,Ga)Se2 (CIGS) absorbing layer is varied from 1.0 to 1.7 eV by changing the composition ratio of gallium (Ga), realizing an optimum design for solar cell absorbers. In this study, the effects of a graded bandgap profile on the cell performance of a CIGS solar cell are investigated using a device simulator. Moreover, optimum bandgap profiles with various defect densities are simulated. In the case of low defect densities, when the lowest bandgap, Egmin, is inside the space-charge region (SCR), the double-graded structure is effective for achieving high efficiency. However, when Egmin is outside the SCR, the negative gradient from Egmin to the CIGS surface acts as a barrier that impedes the collection of photogenerated electrons, thereby increasing the recombination rate and decreasing cell efficiency. In the case of high defect densities, to decrease the recombination current and improve the efficiency, a more positive gradient from the back contact to the surface is needed.

本文言語English
論文番号04ER14
ジャーナルJapanese journal of applied physics
53
4 SPEC. ISSUE
DOI
出版ステータスPublished - 2014 4月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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