Optimization of vertical profiles of SiGe HBT/BiCMOS by promoting emitter diffusion process

Makoto Miura, Hiromi Shimamoto, Reiko Hayami, Akihiro Kodama, Tatsuya Tominari, Takashi Hashimoto, Katsuyoshi Washio

研究成果: Conference article査読

抄録

A new concept, promoting emitter diffusion (PED) process by using high-temperature annealing, is proposed for fabricating high-performance SiGe HBTs. Both the cut-off frequency and maximum oscillation frequency exceeded 200GHz when the annealing temperature was increased from 885°C to 1000°C. This PED process concept is based on the fact that the increased phosphorus diffusion can more than compensate increased boron diffusion and decrease base thickness.

本文言語English
論文番号4.4
ページ(範囲)92-95
ページ数4
ジャーナルProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
出版ステータスPublished - 2004 12 1
外部発表はい
イベントProceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Que., Canada
継続期間: 2004 9 132004 9 14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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