Optimization of the growth conditions for molecular beam epitaxy of Mg xZn1-xO (0 < x < 0:12) films on Zn-polar ZnO substrates

Hiroyuki Yuji, Ken Nakahara, Kentaro Tamura, Shunsuke Akasaka, Yoshio Nishimoto, Daiju Takamizu, Takeyoshi Onuma, Shigefusa F. Chichibu, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki

研究成果: Article

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We report on optimization of the growth conditions for Mg xZn1-xO (x = 0; 0:04; 0:05; 0:12) thin films grown on c-plane Zn-polar ZnO single crystal substrates by using plasma-assisted molecular beam epitaxy (PAMBE). A normal vector to the ZnO substrate surfaces was angled at 0:5 ± 0:1° off from the [0001] c-axis toward the [11̄100] direction, leading to a stable step-and-terrace structure. A growth temperature (Tg) higher than 800 °C led to the ZnO films presenting the first excited state luminescence of A-free excitons in photoluminescence (PL) spectra at 12 K. A Tg higher than 800 °C enhanced optical attributes of a MgxZn1-xO film. The longest PL lifetime of fast-decay components reached 3.5 ns in time-resolved PL measurement for an Mg0.12Zn0.88O film grown at 900 °C, indicating a concentration of nonradiative recombination centers is substantially eliminated compared to the previously reported PL lifetime of 60 ps for an Mg0.11Zn0.89O film grown by pulsed laser deposition.

元の言語English
ページ(範囲)711041-711045
ページ数5
ジャーナルJapanese journal of applied physics
49
発行部数7 PART 1
DOI
出版物ステータスPublished - 2010 7 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント Optimization of the growth conditions for molecular beam epitaxy of Mg <sub>x</sub>Zn<sub>1-x</sub>O (0 < x < 0:12) films on Zn-polar ZnO substrates' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

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    Yuji, H., Nakahara, K., Tamura, K., Akasaka, S., Nishimoto, Y., Takamizu, D., Onuma, T., Chichibu, S. F., Tsukazaki, A., Ohtomo, A., & Kawasaki, M. (2010). Optimization of the growth conditions for molecular beam epitaxy of Mg xZn1-xO (0 < x < 0:12) films on Zn-polar ZnO substrates. Japanese journal of applied physics, 49(7 PART 1), 711041-711045. https://doi.org/10.1143/JJAP.49.071104