Optimization of the balance between the gate-Drain capacitance and the common source inductance for preventing the oscillatory false triggering of fast switching GaN- FETs

Rynosuke Matsumoto, Kazuhiro Umetani, Eiji Hiraki

研究成果: Conference contribution

17 被引用数 (Scopus)

抄録

GaN- FETs are attractive switching devices for their fast switching capability. However, they often suffer from the oscillatory false triggering, i.e. a series of self-sustaining repetitive false triggering induced after a fast switching. The purpose of this paper is to derive a design instruction to prevent this phenomenon. According to the previous study, the oscillatory false triggering was found to be caused by a parasitic oscillator circuit formed of a GaN- FET, its parasitic capacitance, and the parasitic inductance of the wiring. This paper analyzed the oscillatory condition to elucidate the design requirement to prevent the oscillatory false triggering. As a result, balancing the gate-drain parasitic capacitance and the common source inductance to achieve an appropriate ratio was found to be essential for preventing the oscillatory false triggering. Experiment successfully supported prevention of this phenomenon by balancing these two factors.

本文言語English
ホスト出版物のタイトル2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ405-412
ページ数8
ISBN(電子版)9781509029983
DOI
出版ステータスPublished - 2017 11月 3
外部発表はい
イベント9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017 - Cincinnati, United States
継続期間: 2017 10月 12017 10月 5

出版物シリーズ

名前2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
2017-January

Conference

Conference9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017
国/地域United States
CityCincinnati
Period17/10/117/10/5

ASJC Scopus subject areas

  • エネルギー工学および電力技術
  • 電子工学および電気工学
  • 再生可能エネルギー、持続可能性、環境
  • 制御と最適化

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