Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors

A. Rothschild, R. Mitsuhashi, C. Kerner, X. Shi, J. L. Everaert, L. Date, T. Conard, O. Richard, C. Vrancken, R. Verbeeck, A. Veloso, A. Lauwers, M. De Potter, I. Debusschere, M. Jurczak, M. Niwa, P. Absil, S. Biesemans

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We report for the first time that the optimization of a HfSiON process on Ni-FUSI devices is best tackled using a design of experiments (DOE [Myers RH, Montgomery. Response surface methodology. New York, DC: Wiley; 1995]) approach. We show that a DOE allows for directly linking process parameters to relevant short channel performance metrics. By tuning the SiO2 thickness, HfSiO thickness, Hf concentration, nitridation parameters and by using response surface modeling (RSM), we report an improvement of 12%/17% in nMOS/pMOS drive current (Idsat 600/255 uA/μm at Ioff = 20 pA/μm and Vdd = 1.1 V) over our reference process. In parallel, we demonstrate that by selecting the right parameters, plasma nitridation can outperform thermal nitridation with NH3. We believe that this new approach will be useful for device engineers and can be easily applied.

本文言語English
ページ(範囲)521-524
ページ数4
ジャーナルMicroelectronics Reliability
47
4-5 SPEC. ISS.
DOI
出版ステータスPublished - 2007 4
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 安全性、リスク、信頼性、品質管理
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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