Optimal inter-gate separation and overlapped source of multi-channel line tunnel FETs

Narasimhulu Thoti, Yiming Li, Sekhar Reddy Kola, Seiji Samukawa

研究成果: Article査読

13 被引用数 (Scopus)

抄録

This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (LOV). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and LOV of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si0.6Ge0.4. The optimal values of IGS and LOV for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a LOV ≈ LG/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and Ion/Ioff = 109 are achieved.

本文言語English
論文番号2998939
ページ(範囲)38-46
ページ数9
ジャーナルIEEE Open Journal of Nanotechnology
1
1
DOI
出版ステータスPublished - 2020

ASJC Scopus subject areas

  • コンピュータ サイエンスの応用
  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 材料化学

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