Optimal inter-gate separation and overlapped source of multi-channel line tunnel FETs

Narasimhulu Thoti; Yiming Li; Sekhar Reddy Kola; Seiji Samukawa

doi:10.1109/OJNANO.2020.2998939

Optimal inter-gate separation and overlapped source of multi-channel line tunnel FETs

Narasimhulu Thoti, Yiming Li, Sekhar Reddy Kola, Seiji Samukawa

流体科学研究所・未到エネルギー研究センター

研究成果: Article › 査読

13 被引用数 (Scopus)

抄録

This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (L_OV). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and L_OV of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si_0.6Ge_0.4. The optimal values of IGS and L_OV for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a L_OV ≈ L_G/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and I_on/I_off = 10⁹ are achieved.

本文言語	English
論文番号	2998939
ページ（範囲）	38-46
ページ数	9
ジャーナル	IEEE Open Journal of Nanotechnology
巻	1
号	1
DOI	https://doi.org/10.1109/OJNANO.2020.2998939
出版ステータス	Published - 2020

ASJC Scopus subject areas

コンピュータサイエンスの応用
電子工学および電気工学
電子材料、光学材料、および磁性材料
材料化学

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10.1109/OJNANO.2020.2998939

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title = "Optimal inter-gate separation and overlapped source of multi-channel line tunnel FETs",

abstract = "This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (LOV). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and LOV of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si0.6Ge0.4. The optimal values of IGS and LOV for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a LOV ≈ LG/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and Ion/Ioff = 109 are achieved.",

keywords = "Device Simulation, Electrical characteristics, Inter-gate separation, Multi-channel line tunnel field effect transistors, Physical quantities, SiGe, Source overlap, Tunneling Models",

author = "Narasimhulu Thoti and Yiming Li and Kola, {Sekhar Reddy} and Seiji Samukawa",

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AU - Thoti, Narasimhulu

AU - Li, Yiming

AU - Kola, Sekhar Reddy

AU - Samukawa, Seiji

N1 - Publisher Copyright: © IEEE 2020.

PY - 2020

Y1 - 2020

N2 - This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (LOV). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and LOV of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si0.6Ge0.4. The optimal values of IGS and LOV for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a LOV ≈ LG/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and Ion/Ioff = 109 are achieved.

AB - This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (LOV). The scope of the work is to explore the performance boost and optimization of the studied devices by considering geometrical structures, low-bandgap materials, IGS and LOV of the mCLTFETs. The structure is designed without diminishing the subthreshold swing (SS) and the leakage currents through a spacer technology and strained Si0.6Ge0.4. The optimal values of IGS and LOV for the multi-channel concept are estimated subject to several physical constraints of the proposed device. An IGS ≈ 10 nm and a LOV ≈ LG/2 are reported as suitable choice for sub-8-nm technological nodes, where SS = 18 mV/dec and Ion/Ioff = 109 are achieved.

KW - Device Simulation

KW - Electrical characteristics

KW - Inter-gate separation

KW - Multi-channel line tunnel field effect transistors

KW - Physical quantities

KW - SiGe

KW - Source overlap

KW - Tunneling Models

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Optimal inter-gate separation and overlapped source of multi-channel line tunnel FETs

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