Optically coupled 3D common memory with GaAs on Si structure

M. Hirose, H. Takata, M. Koyanagi

研究成果: Conference article査読

抄録

An ultra fast data transfer speed is demonstrated for a novel three dimensional (3D) Static Random Access Memory (SRAM) consisting of multilayer silicon LSI chips on which GaAs LEDs and photodetectors are monolithically integrated for vertical optical interconnections. A unique feature of this system is the capability of parallel data transfer from one memory layer to the upper and lower memory layers by the optical interconnections. The results of static and dynamic simulations of the optically coupled 3D common memory have indicated that a block of 512 bits data can be transferred through four memory layers within 16 nsec. This is an equivalent data transfer speed of 128 Gbits/sec/layer.

本文言語English
ページ(範囲)316-322
ページ数7
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
1362
pt 1
出版ステータスPublished - 1991 1 1
イベントPhysical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - Aachen, Ger
継続期間: 1990 10 281990 11 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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