Optical quality GaInAs grown by molecular beam epitaxy

G. Wicks, C. E.C. Wood, H. Ohno, L. F. Eastman

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Ga47In53As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 1015cm-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.

本文言語English
ページ(範囲)435-440
ページ数6
ジャーナルJournal of Electronic Materials
11
2
DOI
出版ステータスPublished - 1982 3月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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