Optical quality GaInAs grown by molecular beam epitaxy

G. Wicks; C. E.C. Wood; H. Ohno; L. F. Eastman

doi:10.1007/BF02654681

Optical quality GaInAs grown by molecular beam epitaxy

G. Wicks, C. E.C. Wood, H. Ohno, L. F. Eastman

研究成果: Article › 査読

17 被引用数 (Scopus)

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Ga₄₇In₅₃As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 10¹⁵cm^-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.

本文言語	English
ページ（範囲）	435-440
ページ数	6
ジャーナル	Journal of Electronic Materials
巻	11
号	2
DOI	https://doi.org/10.1007/BF02654681
出版ステータス	Published - 1982 3月 1
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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@article{cfdbe352dee94e5da11e605ca04eb3cf,

title = "Optical quality GaInAs grown by molecular beam epitaxy",

abstract = "Ga47In53As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 1015cm-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.",

keywords = "GaInAs, Molecular Beam Epitaxy, Photoluminescence",

author = "G. Wicks and Wood, {C. E.C.} and H. Ohno and Eastman, {L. F.}",

year = "1982",

month = mar,

day = "1",

doi = "10.1007/BF02654681",

language = "English",

volume = "11",

pages = "435--440",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "2",

}

TY - JOUR

T1 - Optical quality GaInAs grown by molecular beam epitaxy

AU - Wicks, G.

AU - Wood, C. E.C.

AU - Ohno, H.

AU - Eastman, L. F.

PY - 1982/3/1

Y1 - 1982/3/1

N2 - Ga47In53As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 1015cm-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.

AB - Ga47In53As films have been grown by molecular beam epitaxy (MBE) on InP substrates. The unintentionally doped material has a free electron concentration of 8 × 1015cm-3 and exhibits sharp (~5 meV linewidth) exciton recombination in the 4K photoluminescence. The films were grown on (100) InP surfaces which were thermally cleaned in the arsenic beam. The effects of the substrate temperature during growth, the Ga to In flux ratio and the group V to group III flux ratio on the 4K photoluminescence are reported.

KW - GaInAs

KW - Molecular Beam Epitaxy

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=0020101488&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020101488&partnerID=8YFLogxK

U2 - 10.1007/BF02654681

DO - 10.1007/BF02654681

M3 - Article

AN - SCOPUS:0020101488

VL - 11

SP - 435

EP - 440

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 2

ER -

Optical quality GaInAs grown by molecular beam epitaxy

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