Optical properties of InGaN/GaN quantum wells with Si doped barriers

Milan S. Minsky, Shigefusa Chichibu, Siegfried B. Fleischer, Amber C. Abare, John E. Bowers, Evelyn Hu, Stacia Keller, Umesh K. Mishra, Steven P. Denbaars

研究成果: Article査読

44 被引用数 (Scopus)

抄録

Optical properties of InGaN/GaN multi-quantum wells with Si doped barriers are studied using cw and time resolved photoluminescence (TRPL) and photoluminescence excitation (PLE) spectroscopy. The room temperature carrier lifetime depends strongly on the Si doping level in the quantum well barriers, decreasing from 10ns to 1 ns as the doping level is increased from unintentionally doped to 5 × 1018 cm-3 (Si:GaN). The shift between the absorption edge and emission peak decreases from 220 meV to 110meV as the doping is increased. Temperature dependent photoluminescence measurements indicate a higher density of non-radiative centers in the undoped structures.

本文言語English
ページ(範囲)L1362-L1364
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
37
11 SUPPL. B
DOI
出版ステータスPublished - 1998 11 15
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

フィンガープリント 「Optical properties of InGaN/GaN quantum wells with Si doped barriers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル