We successfully fabricated cubic InGaN/GaN multiple quantum wells (MQWs) with InN molar fraction up to 25% on 3C-SiC (001) substrates by radio-frequency N2 plasma-assisted molecular beam epitaxy. These structures were grown on high quality cubic GaN epilayers obtained by low temperature GaN buffer layer initiation process. For all samples, several satellite peaks from the cubic InGaN/GaN MQW structures were clearly observed by X-ray diffraction measurements, which indicate that these MQWs have excellent structural quality. Photoluminescence emission was also observed at room temperature for all the MQWs, which have InN molar fractions ranging from 5% to 25%. For the compositional dependence of the PL integral intensity, the maximum value was observed at around 10% InN molar fraction, which suggests the effect of exciton localization caused by the fluctuation of In composition similar to the hexagonal MQWs.
|ジャーナル||Physica Status Solidi (A) Applied Research|
|出版ステータス||Published - 2001 11 1|
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