Optical Properties of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

T. Kitamura, Y. Suzuki, Y. Ishida, X. Q. Shen, H. Nakanishi, S. F. Chichibu, M. Shimizu, H. Okumura

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We successfully fabricated cubic InGaN/GaN multiple quantum wells (MQWs) with InN molar fraction up to 25% on 3C-SiC (001) substrates by radio-frequency N2 plasma-assisted molecular beam epitaxy. These structures were grown on high quality cubic GaN epilayers obtained by low temperature GaN buffer layer initiation process. For all samples, several satellite peaks from the cubic InGaN/GaN MQW structures were clearly observed by X-ray diffraction measurements, which indicate that these MQWs have excellent structural quality. Photoluminescence emission was also observed at room temperature for all the MQWs, which have InN molar fractions ranging from 5% to 25%. For the compositional dependence of the PL integral intensity, the maximum value was observed at around 10% InN molar fraction, which suggests the effect of exciton localization caused by the fluctuation of In composition similar to the hexagonal MQWs.

本文言語English
ページ(範囲)705-709
ページ数5
ジャーナルPhysica Status Solidi (A) Applied Research
188
2
DOI
出版ステータスPublished - 2001 11 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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