Optical properties of an InGaN active layer in ultraviolet light emitting diode

Takahiro Deguchi, Kosuke Torii, Kazuhiro Shimada, Takayuki Sota, Ryuji Matsuo, Mutsumi Sugiyama, Akiko Setoguchi, Shigefusa Chichibu, Shuji Nakamura

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Optical properties of a 5 nm thick InGaN active layer with In content less than a few percent in an ultraviolet light emitting diode, have been studied by employing reflectance, transmittance, and photoluminescence spectroscopy. The co-existence of the localized electronic states and the usual confined ones in the active layer has been demonstrated. A possible origin of the co-existence of those states is attributed to the non-random alloy potential fluctuation in the InGaN active layer.

本文言語English
ページ(範囲)L975-L977
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
9 A/B
DOI
出版ステータスPublished - 1999 9月 15
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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