TY - JOUR
T1 - Optical interposer technology using buried vertical-cavity surface-emitting laser chip and tapered through-silicon via for high-speed chip-to-chip optical interconnection
AU - Noriki, Akihiro
AU - Fujiwara, Makoto
AU - Lee, Kang Wook
AU - Jeong, Woo Cheol
AU - Fukushima, Takafumi
AU - Tanaka, Tetsu
AU - Koyanagi, Mitsumasa
PY - 2009/4
Y1 - 2009/4
N2 - A novel optical interposer with optical interconnections is proposed for integrating three-dimensional (3D) LSI chips on this interposer. Vertical-cavity surface-emitting laser diode (VCSEL) chips and photo diode (PD) chips are buried in the optical interposer with polymeric optical waveguides. The VCSEL is 0.25mm in width, 0.35mm in length, and 0.15mm in height. We realize precise passive alignment between the optical waveguides and the VCSEL/PD chips using two-step alignment processes consisting of cavity-assisted positioning and the subsequent surface-tension-powered self-assembly with a molten solder. In addition, we demonstrate the basic operation of the buried VCSEL chips in the optical interposer through tapered through-silicon vias (TSVs). The tapered TSVs are successfully formed by copper electroplating and are 64 mm in top width, 34 mm in bottom width, and 168 μm in length.
AB - A novel optical interposer with optical interconnections is proposed for integrating three-dimensional (3D) LSI chips on this interposer. Vertical-cavity surface-emitting laser diode (VCSEL) chips and photo diode (PD) chips are buried in the optical interposer with polymeric optical waveguides. The VCSEL is 0.25mm in width, 0.35mm in length, and 0.15mm in height. We realize precise passive alignment between the optical waveguides and the VCSEL/PD chips using two-step alignment processes consisting of cavity-assisted positioning and the subsequent surface-tension-powered self-assembly with a molten solder. In addition, we demonstrate the basic operation of the buried VCSEL chips in the optical interposer through tapered through-silicon vias (TSVs). The tapered TSVs are successfully formed by copper electroplating and are 64 mm in top width, 34 mm in bottom width, and 168 μm in length.
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U2 - 10.1143/JJAP.48.04C113
DO - 10.1143/JJAP.48.04C113
M3 - Article
AN - SCOPUS:77952471764
VL - 48
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 2
M1 - 04C113
ER -