Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes

K. Kojima, Ulrich T. Schwarz, M. Funato, Y. Kawakami, S. Nagahama, T. Mukai

研究成果: Article査読

73 被引用数 (Scopus)

抄録

Optical gain spectra presented for (Al,In)GaN laser diodes with lasing wavelength ranging from UV (375 nm) to aquamarine (470 nm) show a strong increase in inhomogeneous broadening, caused by Indium composition and quantum well width fluctuations which increase with Indium mole fraction. These gain spectra provides a standard data set for the calibration of microscopic many-body simulations. We demonstrate by comparison with basic simulations that the different assumptions of a global constant carrier density or of global constant quasi-Fermi levels for electrons and holes lead to a strikingly different dependency of optical gain on carrier density. For constant quasi-Fermi levels the threshold carrier density becomes insensitive to inhomogeneous broadening for realistic parameters. This is in agreement with the observation that the threshold current is nearly independent over the wavelength range from near UV to aquamarine.

本文言語English
ページ(範囲)7730-7736
ページ数7
ジャーナルOptics Express
15
12
DOI
出版ステータスPublished - 2007 6月 11
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学

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