Optical characterization of InAsN single quantum wells grown by RF-MBE

M. Kuroda, R. Katayama, K. Onabe, Y. Shiraki

研究成果: Article査読

11 被引用数 (Scopus)

抄録

InAsN/GaAs single quantum wells (SQWs) were fabricated on semi insulating GaAs(001) substrates by RF-MBE. The redshift of photoluminescence peak with increasing nitrogen content was observed. It is contrary to the recent report for the bulk dilute InAsN alloy where the blueshift of absorption edge has occurred predominantly due to the Burstein-Moss effect. Considering that the Burstein-Moss shift energy of the one-dimensional quantum well is significantly lower than that of the bulk, this redshift of photoluminescence peak suggests the huge bandgap bowing of InAsN alloy as commonly found in III-V-N type alloys.

本文言語English
ページ(範囲)2791-2794
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
241
12
DOI
出版ステータスPublished - 2004 10 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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