Optical anisotropy of GaNAs grown on GaAs(0 0 1) substrate

Takahiro Mori, Takashi Hanada, Toshiharu Morimura, Meoung Whan Cho, Takafumi Yao

研究成果: Article査読

2 被引用数 (Scopus)

抄録

In this paper GaNxAs1-x surfaces during growth are observed using reflectance difference or reflectance anisotropy spectroscopy (RDS or RAS). The epi-layer was grown by solid-source molecular beam epitaxy (MBE) system with a RF nitrogen prasma source. RD spectra showed broader structure and reduced amplitude compared to those of GaAs surfaces; GaAs(2 × 4)-like features were still observed with weak and blue-shifted peaks. In the low growth temperature region, an extra structure was also observed around 3.02 eV. We proposed that GaNxAs1-xsurface can be classified into three types of the surface.

本文言語English
ページ(範囲)640-642
ページ数3
ジャーナルCurrent Applied Physics
4
6
DOI
出版ステータスPublished - 2004 11 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

フィンガープリント 「Optical anisotropy of GaNAs grown on GaAs(0 0 1) substrate」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル