Optical and structural studies in InGaN quantum well structure laser diodes

Shigefusa F. Chichibu, Takashi Azuhata, Mutsumi Sugiyama, Toshio Kitamura, Yuuki Ishida, Hajime Okumura, Hisayuki Nakanishi, Takayuki Sota, Takashi Mukai

研究成果: Article査読

70 被引用数 (Scopus)

抄録

An In0.06Ga0.94N multiple-quantum-well (MQW) laser diode (LD) structure was shown to have atomically flat interfaces and very small compositional inhomogeneity. However, excitons were confirmed to be localized at the exponential-tail type potential minima in the density of states. Spontaneous emission was assigned as being due to the recombination of localized excitons while the stimulated emission seemed to come from the continuum states energetically higher than the mobility edge.

本文言語English
ページ(範囲)2177-2183
ページ数7
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
19
6
DOI
出版ステータスPublished - 2001 11
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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