Optical and electrical properties of electron-irradiated Cu(In,Ga)Se 2 solar cells

Y. Hirose, M. Warasawa, K. Takakura, S. Kimura, S. F. Chichibu, H. Ohyama, M. Sugiyama

研究成果: Article査読

6 被引用数 (Scopus)

抄録

The optical and electrical properties of electron-irradiated Cu(In,Ga)Se2 (CIGS) solar cells and the thin films that composed the CIGS solar cell structure were investigated. The transmittance of indium tin oxide (ITO), ZnO:Al, ZnO:Ga, undoped ZnO, and CdS thin films did not change for a fluence of up to 1.5 × 1018 cm- 2. However, the resistivity of ZnO:Al and ZnO:Ga, which are generally used as window layers for CIGS solar cells, increased with increasing irradiation fluence. For CIGS thin films, the photoluminescence peak intensity due to Cu-related point defects, which do not significantly affect solar cell performance, increased with increasing electron irradiation. In CIGS solar cells, decreasing JSC and increasing Rs reflected the influence of irradiated ZnO:Al, and decreasing VOC and increasing Rsh mainly tended to reflect the pn-interface properties. These results may indicate that the surface ZnO:Al thin film and several heterojunctions tend to degrade easily by electron irradiation as compared with the bulk of semiconductor-composed solar cells.

本文言語English
ページ(範囲)7321-7323
ページ数3
ジャーナルThin Solid Films
519
21
DOI
出版ステータスPublished - 2011 8 31

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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