@inproceedings{ca44cc8cc88b481eb51f5b4113d484c0,
title = "Optical absorption by E+ miniband of GaAs:N δ-doped superlattices",
abstract = "The optical properties of GaAs:N δ-doped superlattices (SLs) are investigated by photoreflectance (PR), photo luminescence (PL) and photoluminescence excitation (PLE) spectroscopy. A direct evidence of the optical absorption due to an E+ related band of a GaAs:N δ-doped SLs is indicated as a clear absorption edge at 1.6 eV by PLE. AlGaAs layers fabricated on the both sides of the SL region exclude the effect of GaAs absorption on the PLE spectrum, resulting in the successful detection of the absorption property of the SL. In addition, some preliminary characterization of a solar cell using a GaAs:N δ-doped SL is shown. The photocarrier generation originating from SL miniband absorption is confirmed by quantum efficiency measurements.",
keywords = "III-V semiconductor materials, Nanostructures, Solar energy, Spectroscopy, Superlattices",
author = "Shuhei Yagi and Shunsuke Noguchi and Yasuto Hijikata and Shigeyuki Kuboya and Kentaro Onabe and Yoshitaka Okada and Hiroyuki Yaguchi",
year = "2013",
doi = "10.1109/PVSC.2013.6744981",
language = "English",
isbn = "9781479932993",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2490--2493",
booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",
note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",
}