One unit-cell seed layer induced epitaxial growth of heavily nitrogen doped anatase TiO2 films

T. L. Chen, Y. Hirose, T. Hitosugi, T. Hasegawa

    研究成果: Article査読

    15 被引用数 (Scopus)

    抄録

    We present a novel way to obtain heavily nitrogen doped anatase TiO 2 films by using a solid-state nitrogen source. Epitaxial growth of the films was realized by introducing one unit-cell seed layer, which was indicated by reflection high-energy electron diffraction as intensity oscillation. Results of x-ray diffraction and x-ray photoelectron spectroscopy confirmed that the films were in the anatase phase heavily doped with nitrogen of ∼15 at%. The films obtained exhibited considerable narrowing of the optical bandgap, resulting in an enhancement of absorption in the visible-light region.

    本文言語English
    論文番号062005
    ジャーナルJournal of Physics D: Applied Physics
    41
    6
    DOI
    出版ステータスPublished - 2008 3 21

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 音響学および超音波学
    • 表面、皮膜および薄膜

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