On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon

Jan Vanhellemont, Masashi Suezawa, Ichiro Yonenaga

研究成果: Article査読

19 被引用数 (Scopus)

抄録

The formation energy and thermal equilibrium concentration of vacancies in Ge doped Czochralski-grown Si are studied by quenching of samples annealed at temperatures between 1200 and 1350 °C for 1 h under hydrogen atmosphere. After quenching, the majority of the formed vacancy and hydrogen containing point defect clusters are transformed into VH4 defects by a 1 h anneal at 450 °C. Measuring the amplitude of the vibrational band of VH 4 at 2223 cm-1 as function of the quenching temperature allows estimating the vacancy formation energy. An apparent formation energy of about 2 eV is obtained for Ge doping between 7× 1017 and 6.5× 1020 cm-3 which is significantly lower than the 4 eV obtained for high purity Si. In the whole quenching temperature window, the vacancy thermal equilibrium concentration is significantly higher than in Si without Ge doping. It is shown that this lower apparent formation energy can be explained by the presence of vacancy traps.

本文言語English
論文番号016105
ジャーナルJournal of Applied Physics
108
1
DOI
出版ステータスPublished - 2010 7月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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