Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate

T. Someya, Hirokazu Fukidome, Y. Ishida, R. Yoshida, T. Iimori, R. Yukawa, K. Akikubo, Sh Yamamoto, S. Yamamoto, T. Yamamoto, T. Kanai, K. Funakubo, Maki Suemitsu, J. Itatani, F. Komori, S. Shin, I. Matsuda

研究成果: Article査読

16 被引用数 (Scopus)

抄録

Hot carrier dynamics in the Dirac band of n-type epitaxial graphene on a SiC substrate were traced in real time using femtosecond-time-resolved photoemission spectroscopy. The spectral evolution directly reflects the energetically linear density of states superimposed with a Fermi-Dirac distribution. The relaxation time is governed by the internal energy dissipation of electron-electron scattering, and the observed electronic temperature indicates cascade carrier multiplication.

本文言語English
論文番号161103
ジャーナルApplied Physics Letters
104
16
DOI
出版ステータスPublished - 2014 4 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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