Observation of tunnel FET operation in MOSFET with NiSi/Si schottky source/channel interface

Y. Wu, N. Shigemori, S. Sato, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

研究成果: Conference contribution

抄録

Tunnel FET characteristics has been investigated for MOSFETs with NiSi/Si schottky source structure. Ni silicide were formed by the reaction of Ni with SOI silicon source layer, while ordinary diffusion P+ layer was formed for the drain electrode. On-and off-state currents have been evaluated with this structure. The tunnel FET operation is confirmed by the almost constant subthreshold swing at temperatures below 150K.

本文言語English
ホスト出版物のタイトルSolid State Topics (General) - 218th ECS Meeting
出版社Electrochemical Society Inc.
ページ47-52
ページ数6
31
ISBN(電子版)9781566778893
ISBN(印刷版)9781607682417
DOI
出版ステータスPublished - 2010
イベントSolid State Topics General Session - 218th ECS Meeting - Las Vegas, NV, United States
継続期間: 2010 10月 102010 10月 15

出版物シリーズ

名前ECS Transactions
番号31
33
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherSolid State Topics General Session - 218th ECS Meeting
国/地域United States
CityLas Vegas, NV
Period10/10/1010/10/15

ASJC Scopus subject areas

  • 工学(全般)

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