@inproceedings{655ea4003a9d49f493f9ea451ef9f3cd,
title = "Observation of tunnel FET operation in MOSFET with NiSi/Si schottky source/channel interface",
abstract = "Tunnel FET characteristics has been investigated for MOSFETs with NiSi/Si schottky source structure. Ni silicide were formed by the reaction of Ni with SOI silicon source layer, while ordinary diffusion P+ layer was formed for the drain electrode. On-and off-state currents have been evaluated with this structure. The tunnel FET operation is confirmed by the almost constant subthreshold swing at temperatures below 150K.",
author = "Y. Wu and N. Shigemori and S. Sato and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",
year = "2010",
doi = "10.1149/1.3567402",
language = "English",
isbn = "9781607682417",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "31",
pages = "47--52",
booktitle = "Solid State Topics (General) - 218th ECS Meeting",
edition = "31",
note = "Solid State Topics General Session - 218th ECS Meeting ; Conference date: 10-10-2010 Through 15-10-2010",
}