抄録
Non-contact scanning nonlinear dielectric microscopy (NC-SNDM) operated under ultra high vacuum (UHV) conditions was developed. This microscopy enables the simultaneous measurement of the topography and dielectric properties of a specimen. For electrically conductive materials, the tunnelling current is also measurable. The atomic structure of Si(111)7 × 7 was successfully resolved using this new SNDM technique. This is the first report on the achievement of atomic resolution in capacitance measurements.
| 本文言語 | English |
|---|---|
| 論文番号 | 084014 |
| ジャーナル | Nanotechnology |
| 巻 | 18 |
| 号 | 8 |
| DOI | |
| 出版ステータス | Published - 2007 2月 28 |
ASJC Scopus subject areas
- 材料科学（全般）
- バイオエンジニアリング
- 化学 (全般)
- 電子工学および電気工学
- 機械工学
- 材料力学