Observation of Si emission during thermal oxidation of Si(0 0 1) with high-resolution RBS

S. Hosoi, K. Nakajima, M. Suzuki, K. Kimura, Y. Shimizu, S. Fukatsu, K. M. Itoh, M. Uematsu, H. Kageshima, K. Shiraishi

研究成果: Article査読

12 被引用数 (Scopus)

抄録

An epitaxially grown Si isotope heterostructure, 28Si(2 nm)/30Si(1 nm)/natSi, was used to study the behavior of Si atoms during oxidation. The change in the Si-isotope profiles during the oxidation was observed using high-resolution Rutherford backscattering spectroscopy. A significant oxidation-enhanced diffusion of 30Si into the natSi layer was observed in the oxidation at 800 °C, while the concentration of emitted 30Si into the 28SiO2 layer was found to be less than 5 at.% in the oxidation at 1100 °C.

本文言語English
ページ(範囲)390-393
ページ数4
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
249
1-2 SPEC. ISS.
DOI
出版ステータスPublished - 2006 8 1
外部発表はい

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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