Observation of dislocations in GaAs epitaxial layers

J. Nishizawa; Y. Oyama; Y. Okuno

doi:10.1016/0022-0248(81)90399-7

Observation of dislocations in GaAs epitaxial layers

J. Nishizawa, Y. Oyama, Y. Okuno

工学研究科・知能デバイス材料学専攻

研究成果: Article › 査読

1 被引用数 (Scopus)

抄録

Dislocations in GaAs epitaxial layers grown by the temperature difference method of liquid phase epitaxy were observed using X-ray topography and a chemical etching technique. Dislocations in the substrates seem to react with those propagating along the two orthogonal 〈110〉 directions at the interface. The propagation of dislocations from the substrates into the epitaxial layers and the interface lattice distortion of the GaAs homojunctions were investigated using X-ray topography of cleavage surfaces.

本文言語	English
ページ（範囲）	925-928
ページ数	4
ジャーナル	Journal of Crystal Growth
巻	52
号	PART 2
DOI	https://doi.org/10.1016/0022-0248(81)90399-7
出版ステータス	Published - 1981 4

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

文献へのアクセス

10.1016/0022-0248(81)90399-7

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引用スタイル

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