Observation of dislocations in GaAs epitaxial layers

J. Nishizawa, Y. Oyama, Y. Okuno

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Dislocations in GaAs epitaxial layers grown by the temperature difference method of liquid phase epitaxy were observed using X-ray topography and a chemical etching technique. Dislocations in the substrates seem to react with those propagating along the two orthogonal 〈110〉 directions at the interface. The propagation of dislocations from the substrates into the epitaxial layers and the interface lattice distortion of the GaAs homojunctions were investigated using X-ray topography of cleavage surfaces.

本文言語English
ページ(範囲)925-928
ページ数4
ジャーナルJournal of Crystal Growth
52
PART 2
DOI
出版ステータスPublished - 1981 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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