Oblique modes effect on terahertz plasma wave resonant detection in InGaAsInAlAs multichannel transistors

A. Shchepetov, C. Gard̀s, Y. Roelens, A. Cappy, S. Bollaert, S. Boubanga-Tombet, F. Teppe, D. Coquillat, S. Nadar, N. Dyakonova, H. Videlier, W. Knap, D. Seliuta, R. Vadoklis, G. Valušis

研究成果: Article査読

50 被引用数 (Scopus)

抄録

We report on the demonstration of narrow terahertz plasma wave resonant detection at low temperature in 200 nm gate length InGaAsInAlAs multichannel high electron mobility transistors. We observe that the resonant detection linewidth is smaller than in full channel high electron mobility transistors. We interpret this shrinking by the effect of multichannel geometry that does not allow oblique plasma mode propagation along the channel.

本文言語English
論文番号242105
ジャーナルApplied Physics Letters
92
24
DOI
出版ステータスPublished - 2008

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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