Numerical simulations of SiGe crystal growth by the traveling liquidus-zone method in a microgravity environment

K. Abe, S. Sumioka, Kenichi Sugioka, M. Kubo, T. Tsukada, K. Kinoshita, Y. Arai, Y. Inatomi

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Recently, a Si1-xGex(approximately x=0.5) crystal has been grown by the traveling liquidus-zone (TLZ) method under microgravity condition in the International Space Station (ISS). In this work, a mathematical model of the TLZ crystal growth has been developed to investigate details of the transport and solidification phenomena occurred during the TLZ growth of SiGe crystals performed in the ISS. Using this model, the experimental Ge concentration distributions in the grown SiGe crystal is explained, and the emissivity variation of the metal cartridge surface due to oxidation during the crystal growth is revealed to strongly affect the Ge concentration distribution in the grown crystal. In addition, a strategy for growing SiGe crystals, which are more homogeneous than those obtained in the current experiment, is proposed on the basis of the numerical results.

本文言語English
ページ(範囲)71-77
ページ数7
ジャーナルJournal of Crystal Growth
402
DOI
出版ステータスPublished - 2014

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

フィンガープリント

「Numerical simulations of SiGe crystal growth by the traveling liquidus-zone method in a microgravity environment」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル