Nuclear spin resonance induced by radio frequency electric field

N. Kumada, T. Kamada, Y. Hirayama, S. Miyashita, T. Fujisawa

研究成果: Conference contribution

抄録

We demonstrate electric-field-induced nuclear spin resonance mediated by the hyperfine field in a GaAs-based semiconductor. Radio frequency (RF) modulation of a gate bias causes oscillations of electron spins forming a domain structure and thereby oscillations of the hyperfine fields to nuclear spins. When the RF frequency corresponds to the nuclear resonance frequency of 69Ga, 71Ga or 75As, nuclear spins are depolarized and then detected by the change in the resistance of the electronic system.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 29th International Conference, ICPS 29
ページ461-462
ページ数2
DOI
出版ステータスPublished - 2009
イベント29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
継続期間: 2008 7 272008 8 1

出版物シリーズ

名前AIP Conference Proceedings
1199
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
CountryBrazil
CityRio de Janeiro
Period08/7/2708/8/1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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