NPN 30 GHz, 32 GHz fT complementary bipolar technology

Takahiro Onai, Eiji Ohue, Yohji Idei, Masamichi Tanabe, Hiromi Shimamoto, Katsuyoshi Washio, Tohru Nakamura

研究成果: Conference contribution

8 被引用数 (Scopus)

抄録

Fully symmetrical complementary bipolar transistors for low power-dissipation and ultra-high-speed LSIs have been integrated in the same chip using a 0.3-μm SPOTEC process. Reducing the surface concentration of the boron by oxidation at the surface of boron diffusion layer suppressed upward diffusion of boron in the subcollector of the pnp transistor during epitaxial growth. This enabled thin epitaxial layer growth of both npn and pnp transistors simultaneously. Cutoff frequencies of 30 and 32 GHz were obtained in npn and pnp transistors, respectively. These results showed that the power dissipation is reduced to 1/4 in a complementary active pull-down circuit compared with an ECL circuit.

本文言語English
ホスト出版物のタイトルTechnical Digest - International Electron Devices Meeting
編集者 Anon
出版社Publ by IEEE
ページ63-66
ページ数4
ISBN(印刷版)0780314506
出版ステータスPublished - 1993
外部発表はい
イベントProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
継続期間: 1993 12 51993 12 8

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting
ISSN(印刷版)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period93/12/593/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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