Novel transparent conducting oxide: Anatase Ti1-xNb xO2

Yutaka Furubayashi, Taro Hitosugi, Yukio Yamamoto, Yasushi Hirose, Go Kinoda, Kazuhisa Inaba, Toshihiro Shimada, Tetsuya Hasegawa

    研究成果: Conference article査読

    83 被引用数 (Scopus)

    抄録

    Single-crystalline Ti1-xNbxO2 (x = 0.2) films of 40 nm thickness were deposited on SrTiO3 (100) substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction measurement confirmed epitaxial growth of anatase (001) film. The resistivity of Ti 1-xNbxO2 films with x ≥ 0.03 is 2-3 × 10- 4 Ω cm at room temperature. The carrier density of Ti 1-xNbxO2, which is almost proportional to the Nb concentration, can be controlled in a range of 1 × 1019 to 2 × 1021 cm- 3. Optical measurements revealed that internal transmittance in the visible and near-infrared region for films with x = 0.03 was more than 97%. These results demonstrate that the presently developed anatase Ti1-xNbxO2 is one of the promising candidates for the practical TCOs.

    本文言語English
    ページ(範囲)157-159
    ページ数3
    ジャーナルThin Solid Films
    496
    1
    DOI
    出版ステータスPublished - 2006 2月 1
    イベントProceedings of the Fourth International Symposium on Transparent Oxide Thin Film for Electronics and Optics (TOEO-4) -
    継続期間: 2005 4月 72005 4月 8

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 表面および界面
    • 表面、皮膜および薄膜
    • 金属および合金
    • 材料化学

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