Novel Quad-Interface MTJ Technology and its First Demonstration with High Thermal Stability Factor and Switching Efficiency for STT-MRAM beyond 2X nm

K. Nishioka, H. Sato, T. Endoh, H. Honjo, S. Ikeda, T. Watanabe, S. Miura, H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We have proposed a novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor Δ and switching efficiency defined as the ratio of Δ to intrinsic critical current IC0 ( Δ /IC0 ) by a factor of 1.5-2 compared with the conventional double-interface MTJ technology. The free layer of the developed quad interface consists of bottom-MgO/FL1/middle-MgO/FL2/top-MgO stack structure. We successfully fabricated the quad-interface MTJ using a 300-mm process based on a novel low-damage integration process including physical vapor deposition (PVD), reactive ion etching (RIE), and so on. By developing the quad-interface MTJ, we have achieved about two times larger Δ and Δ /IC0 at the same time. Moreover, we have achieved about two times larger tunnel magnetoresistance (TMR) ratio at the same resistance area (RA) product by developing the FL1, bottom-MgO, and middle-MgO. The developed quad-interface MTJ technology considered as post-double-interface MTJ technology will become an essential technology for the scaling of the spin-transfer-torque magnetoresistive random access memory (STT-MRAM) beyond 20 nm.

本文言語English
論文番号8995801
ページ(範囲)995-1000
ページ数6
ジャーナルIEEE Transactions on Electron Devices
67
3
DOI
出版ステータスPublished - 2020 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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