Novel Quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STT-MRAM beyond 2Xnm

K. Nishioka, H. Honjo, S. Ikeda, T. Watanabe, S. Miura, H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, T. Endoh

研究成果: Conference contribution

12 被引用数 (Scopus)

抄録

We have proposed novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor Δ and switching efficiency Δ/IC0 by a factor of 1.5-2 compared with conventional double-interface MTJ technology. We successfully fabricated the quad-interface MTJ using 300mm process based on novel low damage integration process including PVD, RIE and so on [1]. By developing the quad-interface MTJ, we have achieved about two times larger Δ and Δ/IC0. Moreover, we have achieved about two times larger TMR ratio/RA by the stack development specific for the quad-interface MTJ technology. The developed quad-interface MTJ technology regarded as post-double-interface MTJ technology will become an essential technology for the scaling of the STT-MRAM beyond 20nm.

本文言語English
ホスト出版物のタイトル2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers
出版社Institute of Electrical and Electronics Engineers Inc.
ページT120-T121
ISBN(電子版)9784863487178
DOI
出版ステータスPublished - 2019 6
イベント39th Symposium on VLSI Technology, VLSI Technology 2019 - Kyoto, Japan
継続期間: 2019 6 92019 6 14

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
2019-June
ISSN(印刷版)0743-1562

Conference

Conference39th Symposium on VLSI Technology, VLSI Technology 2019
国/地域Japan
CityKyoto
Period19/6/919/6/14

ASJC Scopus subject areas

  • 電子工学および電気工学

フィンガープリント

「Novel Quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STT-MRAM beyond 2Xnm」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル