Novel oxygen showering process (OSP) for extreme damage suppression of sub-20nm high density p-MTJ array without IBE treatment

J. H. Jeong, Tetsuo Endoh

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

A novel damage recovery scheme using the oxygen showering post-treatment (OSP) is proposed to recover patterning damages and to improve electric and magnetic properties of p-MTJs, and its array yield. By applying our OSP to 25nm p-MTJs cell array, the MR was increased from 99% to 116% and the Isw was decreased from 41.1uA to 28.7uA. Moreover, electric short fails of MTJs array due to metallic by-products reduced dramatically by the selective oxidation of the damaged layer and its isolation from damage-less area. The OSP process makes the switching efficiency of 25nm patterned MTJs to be improved more than 30% compared with IBE treatment process. The mechanism of this enhancement is that spin directions of damaged area is changed from perpendicular to in-plane and, by this change, the energy barrier of damaged area is reduced. By the OSP treatment, we could develop the robust patterning process for sub-20nm STT-MRAM.

本文言語English
ホスト出版物のタイトル2015 Symposium on VLSI Technology, VLSI Technology 2015 - Digest of Technical Papers
出版社Institute of Electrical and Electronics Engineers Inc.
ページT158-T159
ISBN(電子版)9784863485013
DOI
出版ステータスPublished - 2015 8 25
イベントSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
継続期間: 2015 6 162015 6 18

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
2015-August
ISSN(印刷版)0743-1562

Other

OtherSymposium on VLSI Technology, VLSI Technology 2015
国/地域Japan
CityKyoto
Period15/6/1615/6/18

ASJC Scopus subject areas

  • 電子工学および電気工学

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