Novel Method of Evaluating Accurate Thermal Stability for MTJs Using Thermal Disturbance and its Demonstration for Single-/Double-Interface p-MTJ

Takashi Saito, Kenchi Ito, Hiroaki Honjo, Shoji Ikeda, Tetsuo Endoh

研究成果: Article査読

11 被引用数 (Scopus)

抄録

We propose a novel method to evaluate the accurate thermal stability factor Δ0 quickly, in 10 min for one target magnetic tunnel junction (MTJ), without magnetoresistance random access memory chip which includes CMOS devices. This method is based on the thermal disturbance between parallel state and antiparallel state at high temperature as well as the temperature dependence of material properties. Using this method, we have successfully demonstrated that Δ0 factors of 70 nm φ p-MTJ with single and double CoFeB/MgO interfaces at 24 °C are 76.1 and 178.2, respectively. The value of Δ0 of p-MTJ with double CoFeB/MgO interface is about twice as single one.

本文言語English
論文番号3400505
ジャーナルIEEE Transactions on Magnetics
54
4
DOI
出版ステータスPublished - 2018 4

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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