Novel doping technology for ultra-shallow junction fabrication: Boron diffusion from boron-adsorbed layer by rapid thermal annealing

Ki Seon Kim, Yun Heub Song, Ki Tae Park, Hiroyuki Kurino, Takashi Matsuura, Kazuhiro Hane, Mitsumasa Koyanagi

研究成果: Conference article査読

15 被引用数 (Scopus)

抄録

A new doping method to fabricate an ultra-shallow junction for the sub-0.1 μm pMOSFET was investigated, in which boron in an absorbed layer diffused into Si substrate during rapid thermal annealing (RTA) at high temperature. This method made it possible to control the junction depth and doping concentration by varying quantitatively the boron coverage and to achieve a high doping efficiency due to the high surface localization of boron. The boron diffusion from an adsorbed layer with low boron coverage of below approximately 0.45 ML produced extremely shallow junction (below approximately 25 nm) with low sheet resistance (below approximately 2.5 kΩ/sq.). This doping technique was applied to form a shallow source and drain extension region for sub-0.1 μm pMOSFET. The pMOSFET fabricated showed a fairly good performance, indicating an effective suppression of the short channel effect. This suggests that the boron atomic-layer doping is a more promising doping chnique to form ultra-shallow junctions with good electrical characteristics.

本文言語English
ページ(範囲)207-212
ページ数6
ジャーナルThin Solid Films
369
1
DOI
出版ステータスPublished - 2000 7 3
イベントThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
継続期間: 1999 9 121999 9 17

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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