Novel ArF photoresist polymer to suppress the roughness formation in plasma etching processes

Keisuke Kato, Atsushi Yasuda, Shin Ichi Maeda, Takuji Uesugi, Takeru Okada, Akira Wada, Seiji Samukawa

研究成果: Conference contribution

抄録

The serious problem associated with 193-nm lithography using an ArF photoresist is roughness formation of photoresist polymer during plasma processes. We have previously investigated the mechanism of roughness formation caused by plasma. The main deciding factor for roughness formation is a chemical reaction between photoresist polymer and reactive species from plasma. The lactone group in photoresist polymer is highly chemically reactive, and shrinking the lactone structure enhances the roughness formation. In this paper, on the basis of the mechanism of roughness formation, we propose a novel ArF photoresist polymer. The roughness formation was much more suppressed in the novel photoresist polymer during plasma etching process than in the previous type. In the novel photoresist polymer, chemical reactions were spread evenly on the photoresist film surface by adding the polar structure. As a result, decreases in the lactone group were inhibited, leading to suppressing ArF photoresist roughness.

本文言語English
ホスト出版物のタイトルAdvances in Resist Materials and Processing Technology XXX
DOI
出版ステータスPublished - 2013
イベントAdvances in Resist Materials and Processing Technology XXX - San Jose, CA, United States
継続期間: 2013 2 252013 2 27

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
8682
ISSN(印刷版)0277-786X

Other

OtherAdvances in Resist Materials and Processing Technology XXX
CountryUnited States
CitySan Jose, CA
Period13/2/2513/2/27

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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