Normal-pressure and low-temperature thermal oxidation of silicon

Hongyong Zhang, Hiroshi Kanoh, Osamu Sugiura, Shunri Oda, Yasutaka Uchida, Takeo Hattori, Masakiyo Matsumura

    研究成果: Article査読

    6 被引用数 (Scopus)

    抄録

    A new thermal oxidation method of silicon has been proposed and its feasibility has been demonstrated experimentally. Silicon-dioxide of 7 nm thickness was grown within 24 h at about 250°C by continuously supplying fresh nitric acid to a reaction tube under normal-pressure conditions. Detailed oxidation characteristics as well as the structure of the oxide are described. The oxide/semiconductor interface was changed from accumulation state to inversion state, and vice versa, by an application of the gate voltage. The minimum interface state density after 350°C annealing was about 2×1011 cm-2 eV-1.

    本文言語English
    ページ(範囲)1907-1911
    ページ数5
    ジャーナルJapanese journal of applied physics
    26
    11 R
    DOI
    出版ステータスPublished - 1987 11

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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