A new thermal oxidation method of silicon has been proposed and its feasibility has been demonstrated experimentally. Silicon-dioxide of 7 nm thickness was grown within 24 h at about 250°C by continuously supplying fresh nitric acid to a reaction tube under normal-pressure conditions. Detailed oxidation characteristics as well as the structure of the oxide are described. The oxide/semiconductor interface was changed from accumulation state to inversion state, and vice versa, by an application of the gate voltage. The minimum interface state density after 350°C annealing was about 2×1011 cm-2 eV-1.
ASJC Scopus subject areas
- Physics and Astronomy(all)