Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating

Masanori Natsui, Daisuke Suzuki, Noboru Sakimura, Ryusuke Nebashi, Yukihide Tsuji, Ayuka Morioka, Tadahiko Sugibayashi, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

研究成果: Conference contribution

65 被引用数 (Scopus)

抄録

Nonvolatile logic-in-memory (NV-LIM) architecture [1], where magnetic tunnel junction (MTJ) devices [2] are distributed over a CMOS logic-circuit plane, has the potential of overcoming the serious power-consumption problem that has rapidly become a dominant constraint on the performance improvement of today's VLSI processors. Normally-off and instant-on capabilities with a small area penalty due to non-volatility and three-dimensional-stackability of MTJ devices in the above structure allow us to apply a power-gating technique in a fine temporal granularity, which can perfectly eliminate wasted power dissipation due to leakage current. The impact of embedding nonvolatile memory devices into a logic circuit was, however, demonstrated by using only small fabricated primitive logic-circuit elements [3], memory-like structures such as FPGA [4], or circuit simulation because of the lack of an established MTJ-oriented design flow reflecting the chip-fabrication environment, while larger-capacity and/or high-speed-access MRAM has been increasingly developed. In this paper, we present an MTJ/MOS-hybrid video coding hardware that uses a cycle-based power-gating technique for a practical-scale MTJ-based NV-LIM LSI, which is fully designed using the established semi-automated MTJ-oriented design flow.

本文言語English
ホスト出版物のタイトル2013 IEEE International Solid-State Circuits Conference, ISSCC 2013 - Digest of Technical Papers
ページ194-195
ページ数2
DOI
出版ステータスPublished - 2013 4 29
イベント2013 60th IEEE International Solid-State Circuits Conference, ISSCC 2013 - San Francisco, CA, United States
継続期間: 2013 2 172013 2 21

出版物シリーズ

名前Digest of Technical Papers - IEEE International Solid-State Circuits Conference
56
ISSN(印刷版)0193-6530

Other

Other2013 60th IEEE International Solid-State Circuits Conference, ISSCC 2013
国/地域United States
CitySan Francisco, CA
Period13/2/1713/2/21

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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