Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers

Takenori Tanno, Ken Suto, Yutaka Oyama, Jun Ichi Nishizawa

研究成果: Article査読

抄録

We have investigated the relation between deep levels in Mg-doped p-type GaP liquid phase epitaxy (LPE) layers and stoichiometry of the surface of the substrates by PHCAP measurement. Concentration of a deep donor level at E C-1.9-2.1eV is higher in an n-type undoped GaP substrate annealed with applying phosphorus vapor pressure of 20kPa than in sample annealed beneath a carbon cover. Next, Mg-doped LPE layers are grown on substrates that have been pre-annealed under phosphorus vapor pressure just before the growth. The densities of deep levels at EV+0.85 and EV+1.5eV in long-time (2h) pre-annealing sample are greatly decreased, but a deep level at EC-1.9-2.1eV shows opposite tendency. The latter is thought to be identical to a deep level detected in the substrate, probably phosphorus interstitial atoms.

本文言語English
ページ(範囲)437-440
ページ数4
ジャーナルMaterials Science in Semiconductor Processing
6
5-6
DOI
出版ステータスPublished - 2003 10月

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル