Nonlinear low-temperature transport of electrons through a multilevel quantum dot

Takeshi Inoshita, Yoshio Kuramoto, Hiroyuki Sakaki

研究成果: Article査読

抄録

Nonlinear electron transport through a semiconductor quantum dot in the low-temperature Kondo regime is studied theoretically. Particular emphasis is put on examining the effects of the inherent multilevel electronic structure of the semiconductor dot. Combining the nonequilibrium Green function method with the noncrossing approximation, we derived differential conductance as a function of the source-drain voltage and found that characteristic side peaks appear in addition to the Kondo peak. These side peaks, which survive dissipation broadening, should provide a hallmark of Kondo correlation in this system.

本文言語English
ジャーナルSuperlattices and Microstructures
22
1
出版ステータスPublished - 1997 7

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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