Nonequilibrium spin fluctuations in nonmagnetic single-electron transistors and quantum dots

J. Martinek, J. Barnaś, G. Schön, S. Takahashi, S. Maekawa

研究成果: Article査読

1 被引用数 (Scopus)

抄録

It is shown that nonequilibrium spin fluctuations significantly influence electronic transport in a single-electron transistor, when the spin relaxation on the island is slow. To describe spin fluctuations, the "orthodox" tunneling theory is generalized by taking into account the electron spin. It is shown that the transition between consecutive charge states can occur via high-spin states, which significantly modifies the shape of Coulomb steps and gives rise to additional resonances at low temperatures.

本文言語English
ページ(範囲)343-346
ページ数4
ジャーナルJournal of Superconductivity and Novel Magnetism
16
2
出版ステータスPublished - 2003
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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