SrTiO3 and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current-voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO 3, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current-voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current-voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current-voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.
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