Non-invasive digital etching of van der Waals semiconductors

Jian Zhou, Chunchen Zhang, Li Shi, Xiaoqing Chen, Tae Soo Kim, Minseung Gyeon, Jian Chen, Jinlan Wang, Linwei Yu, Xinran Wang, Kibum Kang, Emanuele Orgiu, Paolo Samorì, Kenji Watanabe, Takashi Taniguchi, Kazuhito Tsukagoshi, Peng Wang, Yi Shi, Songlin Li

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain synchronized controls over tailoring selectivity and precision. Here we report a protocol that allows for non-invasive and atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion and subsequent wet etching. The mechanism of selective alloying between sacrifice metal atoms and defective or pristine dichalcogenides is analyzed with high-resolution scanning transmission electron microscopy. Also, the non-invasive nature and atomic level precision of our etching technique are corroborated by consistent spectral, crystallographic, and electrical characterization measurements. The low-temperature charge mobility of as-etched MoS2 reaches up to 1200 cm2 V−1s−1, comparable to that of exfoliated pristine counterparts. The entire protocol represents a highly precise and non-invasive tailoring route for material manipulation.

本文言語English
論文番号1844
ジャーナルNature communications
13
1
DOI
出版ステータスPublished - 2022 12月
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 生化学、遺伝学、分子生物学(全般)
  • 一般
  • 物理学および天文学(全般)

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