Noise spectroscopy studies of GaAs/AlGaAs hall devices for optimizing micro- and nano-scale magnetic measurements

J. Muller, B. Korbitzer, A. Amyan, M. Pohlit, Y. Ohno, H. Ohno

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We report on a comprehensive characterization of the fluctuation properties of micro-Hall magnetometers based on a two-dimensional electron system (2DES) in δ-doped GaAs/AlGaAs semiconductor heterostructures. The analysis of the temperature- and frequency-dependent noise in a simple model of non-exponential kinetics reveals a distribution of activation energies for the 1/f α-type fluctuations. In addition to the 1/f-noise, two-level fluctuators with distinct energies are observed. We identify deep donor levels in AlGaAs (DX centers) as the predominant source of 1/f-noise and discuss the effect of the corresponding energy signature of these defect levels on the device performance in different temperature regimes, where we find an extremely low noise level at temperatures below ∼ 100 K and above ∼ 200 K.

本文言語English
ホスト出版物のタイトル2015 International Conference on Noise and Fluctuations, ICNF 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781467383356
DOI
出版ステータスPublished - 2015 10 2
イベントInternational Conference on Noise and Fluctuations, ICNF 2015 - Xian, China
継続期間: 2015 6 22015 6 6

出版物シリーズ

名前2015 International Conference on Noise and Fluctuations, ICNF 2015

Other

OtherInternational Conference on Noise and Fluctuations, ICNF 2015
CountryChina
CityXian
Period15/6/215/6/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Acoustics and Ultrasonics

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