Noise of newly developed Static Induction Transistors (SIT), that are aside-gated and a recess-gated SIT for the use of low power communications, are measured in the frequency range of 5 to 100 MHz. The methods and results of the measurements of noise and also the equivalent circuit analysis of the thermal noise of source resistance of SIT, are discussed. It is cleared that the source resistance is a main source of the intrinsic thermal noise of SIT.
|ジャーナル||IEEE International Symposium on Electromagnetic Compatibility|
|出版ステータス||Published - 1994 12 1|
|イベント||Proceedings of the 1994 International Symposium on Electromagnetic Compatibility - Miyagi, Jpn|
継続期間: 1994 5 16 → 1994 5 20
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