Noise of static induction transistor for low power communication in the range of 5 to 100 MHz

Hiroshi Inoue, Daitaro Okuyama

    研究成果: Conference article査読

    抄録

    Noise of newly developed Static Induction Transistors (SIT), that are aside-gated and a recess-gated SIT for the use of low power communications, are measured in the frequency range of 5 to 100 MHz. The methods and results of the measurements of noise and also the equivalent circuit analysis of the thermal noise of source resistance of SIT, are discussed. It is cleared that the source resistance is a main source of the intrinsic thermal noise of SIT.

    本文言語English
    ページ(範囲)241-244
    ページ数4
    ジャーナルIEEE International Symposium on Electromagnetic Compatibility
    出版ステータスPublished - 1994 12 1
    イベントProceedings of the 1994 International Symposium on Electromagnetic Compatibility - Miyagi, Jpn
    継続期間: 1994 5 161994 5 20

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    フィンガープリント 「Noise of static induction transistor for low power communication in the range of 5 to 100 MHz」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル