Nitrogen profile study for SiON gate dielectrics of advanced dynamic random access memory
Shigemi Murakawa, Masashi Takeuchi, Minoru Honda, Shu Ichi Ishizuka, Toshio Nakanishi, Yoshihiro Hirota, Takuya Sugawara, Yoshitsugu Tanaka, Yasushi Akasaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
研究成果: Article › 査読
6
被引用数
(Scopus)