Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

Yongxun Liu, Tetsuro Hayashida, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Shin Ichi O'uchi, Kunihoro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Eiichi Suzuki

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The nitrogen gas flow ratio (R N ) controlled PVD TiN gate technology and its applications for FinFET CMOS have been investigated for the first time. It is experimentally found that the electrical characteristics such as the S-slope and mobility for FinFETs are almost independent of the R N , but those for planar MOSFETs are markedly deteriorated with increasing the R N due to the increased D it . The FinFET CMOS inverters with excellent transfer characteristics and a good logic gate threshold voltage close to V dd /2 are demonstrated using the R N controlled TiN gates. These experimental results are very useful to set a proper V th for TiN gate-last FinFET CMOS.

本文言語English
ホスト出版物のタイトル2007 International Semiconductor Device Research Symposium, ISDRS
DOI
出版ステータスPublished - 2007 12 1
外部発表はい
イベント2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
継続期間: 2007 12 122007 12 14

出版物シリーズ

名前2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
国/地域United States
CityCollege Park, MD
Period07/12/1207/12/14

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

フィンガープリント

「Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル