The nitrogen gas flow ratio (R
) controlled PVD TiN gate technology and its applications for FinFET CMOS have been investigated for the first time. It is experimentally found that the electrical characteristics such as the S-slope and mobility for FinFETs are almost independent of the R
, but those for planar MOSFETs are markedly deteriorated with increasing the R
due to the increased D
. The FinFET CMOS inverters with excellent transfer characteristics and a good logic gate threshold voltage close to V
/2 are demonstrated using the R
controlled TiN gates. These experimental results are very useful to set a proper V
for TiN gate-last FinFET CMOS.