Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

Yongxun Liu; Tetsuro Hayashida; Takashi Matsukawa; Kazuhiko Endo; Meishoku Masahara; Shin Ichi O'uchi; Kunihoro Sakamoto; Kenichi Ishii; Junichi Tsukada; Yuki Ishikawa; Hiromi Yamauchi; Atsushi Ogura; Eiichi Suzuki

doi:10.1109/ISDRS.2007.4422324

Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

Yongxun Liu, Tetsuro Hayashida, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Shin Ichi O'uchi, Kunihoro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Atsushi Ogura, Eiichi Suzuki

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The nitrogen gas flow ratio (R _N ) controlled PVD TiN gate technology and its applications for FinFET CMOS have been investigated for the first time. It is experimentally found that the electrical characteristics such as the S-slope and mobility for FinFETs are almost independent of the R _N , but those for planar MOSFETs are markedly deteriorated with increasing the R _N due to the increased D _it . The FinFET CMOS inverters with excellent transfer characteristics and a good logic gate threshold voltage close to V _dd /2 are demonstrated using the R _N controlled TiN gates. These experimental results are very useful to set a proper V _th for TiN gate-last FinFET CMOS.

本文言語	English
ホスト出版物のタイトル	2007 International Semiconductor Device Research Symposium, ISDRS
DOI	https://doi.org/10.1109/ISDRS.2007.4422324
出版ステータス	Published - 2007 12月 1
外部発表	はい
イベント	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States 継続期間: 2007 12月 12 → 2007 12月 14

出版物シリーズ

名前	2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other	2007 International Semiconductor Device Research Symposium, ISDRS
国/地域	United States
City	College Park, MD
Period	07/12/12 → 07/12/14

ASJC Scopus subject areas

電子工学および電気工学
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1109/ISDRS.2007.4422324

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引用スタイル

Liu, Y., Hayashida, T., Matsukawa, T., Endo, K., Masahara, M., O'uchi, S. I., Sakamoto, K., Ishii, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ogura, A., & Suzuki, E. (2007). Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422324] (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422324

Liu, Y, Hayashida, T, Matsukawa, T, Endo, K, Masahara, M, O'uchi, SI, Sakamoto, K, Ishii, K, Tsukada, J, Ishikawa, Y, Yamauchi, H, Ogura, A & Suzuki, E 2007, Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422324, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 07/12/12. https://doi.org/10.1109/ISDRS.2007.4422324

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abstract = " The nitrogen gas flow ratio (R N ) controlled PVD TiN gate technology and its applications for FinFET CMOS have been investigated for the first time. It is experimentally found that the electrical characteristics such as the S-slope and mobility for FinFETs are almost independent of the R N , but those for planar MOSFETs are markedly deteriorated with increasing the R N due to the increased D it . The FinFET CMOS inverters with excellent transfer characteristics and a good logic gate threshold voltage close to V dd /2 are demonstrated using the R N controlled TiN gates. These experimental results are very useful to set a proper V th for TiN gate-last FinFET CMOS.",

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AU - Liu, Yongxun

AU - Hayashida, Tetsuro

AU - Matsukawa, Takashi

AU - Endo, Kazuhiko

AU - Masahara, Meishoku

AU - O'uchi, Shin Ichi

AU - Sakamoto, Kunihoro

AU - Ishii, Kenichi

AU - Tsukada, Junichi

AU - Ishikawa, Yuki

AU - Yamauchi, Hiromi

AU - Ogura, Atsushi

AU - Suzuki, Eiichi

PY - 2007/12/1

Y1 - 2007/12/1

N2 - The nitrogen gas flow ratio (R N ) controlled PVD TiN gate technology and its applications for FinFET CMOS have been investigated for the first time. It is experimentally found that the electrical characteristics such as the S-slope and mobility for FinFETs are almost independent of the R N , but those for planar MOSFETs are markedly deteriorated with increasing the R N due to the increased D it . The FinFET CMOS inverters with excellent transfer characteristics and a good logic gate threshold voltage close to V dd /2 are demonstrated using the R N controlled TiN gates. These experimental results are very useful to set a proper V th for TiN gate-last FinFET CMOS.

AB - The nitrogen gas flow ratio (R N ) controlled PVD TiN gate technology and its applications for FinFET CMOS have been investigated for the first time. It is experimentally found that the electrical characteristics such as the S-slope and mobility for FinFETs are almost independent of the R N , but those for planar MOSFETs are markedly deteriorated with increasing the R N due to the increased D it . The FinFET CMOS inverters with excellent transfer characteristics and a good logic gate threshold voltage close to V dd /2 are demonstrated using the R N controlled TiN gates. These experimental results are very useful to set a proper V th for TiN gate-last FinFET CMOS.

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SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -

Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

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