TY - GEN
T1 - Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS
AU - Liu, Yongxun
AU - Hayashida, Tetsuro
AU - Matsukawa, Takashi
AU - Endo, Kazuhiko
AU - Masahara, Meishoku
AU - O'uchi, Shin Ichi
AU - Sakamoto, Kunihoro
AU - Ishii, Kenichi
AU - Tsukada, Junichi
AU - Ishikawa, Yuki
AU - Yamauchi, Hiromi
AU - Ogura, Atsushi
AU - Suzuki, Eiichi
PY - 2007/12/1
Y1 - 2007/12/1
N2 -
The nitrogen gas flow ratio (R
N
) controlled PVD TiN gate technology and its applications for FinFET CMOS have been investigated for the first time. It is experimentally found that the electrical characteristics such as the S-slope and mobility for FinFETs are almost independent of the R
N
, but those for planar MOSFETs are markedly deteriorated with increasing the R
N
due to the increased D
it
. The FinFET CMOS inverters with excellent transfer characteristics and a good logic gate threshold voltage close to V
dd
/2 are demonstrated using the R
N
controlled TiN gates. These experimental results are very useful to set a proper V
th
for TiN gate-last FinFET CMOS.
AB -
The nitrogen gas flow ratio (R
N
) controlled PVD TiN gate technology and its applications for FinFET CMOS have been investigated for the first time. It is experimentally found that the electrical characteristics such as the S-slope and mobility for FinFETs are almost independent of the R
N
, but those for planar MOSFETs are markedly deteriorated with increasing the R
N
due to the increased D
it
. The FinFET CMOS inverters with excellent transfer characteristics and a good logic gate threshold voltage close to V
dd
/2 are demonstrated using the R
N
controlled TiN gates. These experimental results are very useful to set a proper V
th
for TiN gate-last FinFET CMOS.
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U2 - 10.1109/ISDRS.2007.4422324
DO - 10.1109/ISDRS.2007.4422324
M3 - Conference contribution
AN - SCOPUS:44949182739
SN - 1424418917
SN - 9781424418916
T3 - 2007 International Semiconductor Device Research Symposium, ISDRS
BT - 2007 International Semiconductor Device Research Symposium, ISDRS
T2 - 2007 International Semiconductor Device Research Symposium, ISDRS
Y2 - 12 December 2007 through 14 December 2007
ER -